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| SI4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) N-Channel N Channel P-Channel P Channel 20 -20 20 FEATURES rDS(on) (W) 0.020 @ VGS = 4.5 V 0.030 @ VGS = 2.5 V 0.060 @ VGS = -4.5 V 0.100 @ VGS = -2.5 V ID (A) 9.1 7.5 -5.3 -4.1 D TrenchFETr Power MOSFET SO-8 S1 G1 S2 G2 1 2 3 4 Top View G1 Ordering Information: SI4500BDY SI4500BDY-T1 (with Tape and Reel) SI4500BDY--E3 (Lead (Pb)-Free) SI4500BDY-T1--E3 (Lead (Pb)-Free with Tape and Reel) 8 7 6 5 D D D D G2 S2 D S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C P-Channel 10 sec. Steady State -20 "12 Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 sec. Steady State 20 "12 Unit V 9.1 7.3 30 2.1 2.5 1.6 6.6 5.3 1.1 1.3 0.8 -5.3 -4.9 -20 -2.1 2.5 1.6 -55 to 150 -3.8 -3.1 -1.1 1.3 0.8 W _C A THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board. b. t v 10 sec Document Number: 72281 S-41428--Rev. B, 26-Jul-04 www.vishay.com t v 10 sec Steady-State Steady-State P- Channel Typ 41 75 23 Symbol RthJA RthJF Typ 40 75 20 Max 50 95 22 Max 50 95 26 Unit _C/W C/W 1 SI4500BDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS( h) GS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -16 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = -16 V, VGS = 0 V, TJ = 55_C On-State On State Drain Currentb ID( ) D(on) VDS = 5 V, VGS = 4.5 V VDS = -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 9.1 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = -4.5 V, ID = -5.3 A VGS = 2.5 V, ID = 3.3 A VGS = -2.5 V, ID = -1 A Forward Transconductanceb gf fs VSD VDS = 15 V, ID = 9.1 A VDS = -15 V, ID = -5.3 A IS = 2.1 A, VGS = 0 V IS = -2.1 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -20 0.016 0.048 0.024 0.082 29 11 0.8 -0.8 1.2 -1.2 0.020 0.060 0.030 0.100 S W 0.6 -0.6 1.5 -1.5 "100 "100 1 -1 5 -5 A mA V Symbol Test Condition Min Typa Max Unit Gate-Body Gate Body Leakage nA Diode Forward Voltageb V Dynamica Total Gate Charge Qg Qgs Qgd d td( ) d(on) tr td( ff) d(off) tf trr IF = 2.1 A, di/dt = 100 A/ms IF = -2.1 A, di/dt = 100 A/ms N-Channel N Ch l VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W P-Channel VDD = -10 V, RL = 10 W 10 V ID ^ -1 A, VGEN = -4.5 V, Rg = 6 W N-Channel VDS = 10 V, VGS = 4.5 V, ID = 9.1 A P-Channel VDS = -10 V, VGS = -4.5 V ID = -5.3 A 10 V 4 5 V, 53 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 11 6.0 2.5 1.3 3.2 1.6 35 20 50 35 31 55 15 35 30 25 50 30 80 60 50 85 30 60 60 50 ns 17 9 nC Gate-Source Gate Source Charge Gate-Drain Gate Drain Charge Turn-On Turn On Delay Time Rise Time Turn-Off Turn Off Delay Time Fall Time Source-Drain Source Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 72281 S-41428--Rev. B, 26-Jul-04 SI4500BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 25 ID - Drain Current (A) 20 15 2V 10 5 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS = 5 thru 3 V 2.5 V 30 25 ID - Drain Current (A) 20 15 10 5 0 0.0 N-CHANNEL Transfer Characteristics TC = 125_C 25_C -55_C 0.5 1.0 1.5 2.0 2.5 3.0 1.5 V VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.08 0.07 r DS(on)- On-Resistance ( W ) C - Capacitance (pF) 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 5 10 15 20 25 30 ID - Drain Current (A) VGS = 2.5 V VGS = 4.5 V 1600 1400 1200 1000 800 600 400 200 Crss 0 0 4 Capacitance Ciss Coss 8 12 16 20 VDS - Drain-to-Source Voltage (V) Gate Charge 5 VDS = 10 V ID = 9.1 A rDS(on) - On-Resiistance (Normalized) 1.6 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 4 1.4 VGS = 4.5 V ID = 9.1 A 3 1.2 2 1.0 1 0.8 0 0 2 4 6 8 10 12 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 72281 S-41428--Rev. B, 26-Jul-04 www.vishay.com 3 SI4500BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 30 N-CHANNEL 0.08 0.07 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage r DS(on)- On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 10 0.06 0.05 0.04 0.03 0.02 0.01 ID = 3.3 A ID = 9.1 A TJ = 25_C 0 0 0.3 0.6 0.9 1.2 1.5 0.00 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Threshold Voltage 0.4 ID = 250 mA 0.2 VGS(th) Variance (V) Power (W) 80 70 60 50 40 30 20 -0.4 10 -0.6 -50 0 0.001 Single Pulse Power -0.0 -0.2 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 Safe Operating Area rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D - Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse BVDSS Limited 1 10 100 P(t) = 10 dc 0.01 0.1 VDS - Drain-to-Source Voltage (V) www.vishay.com Document Number: 72281 S-41428--Rev. B, 26-Jul-04 4 SI4500BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance N-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 75_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Foot Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 3.5 V 20 3V 16 I D - Drain Current (A) P-CHANNEL Transfer Characteristics TC = -55_C 25_C 125_C 16 I D - Drain Current (A) 12 2.5 V 8 2V 1.5 V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 12 8 4 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) www.vishay.com Document Number: 72281 S-41428--Rev. B, 26-Jul-04 5 SI4500BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.20 r DS(on) - On-Resistance ( W ) 800 700 C - Capacitance (pF) 0.16 VGS = 2.5 V 0.12 600 500 400 300 200 100 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 Coss Ciss P-CHANNEL Capacitance 0.08 VGS = 4.5 V 0.04 Crss ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 5.3 A 4 rDS(on) - On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.3 A 3 1.2 2 1.0 1 0.8 0 0 1 2 3 4 5 6 7 8 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.20 On-Resistance vs. Gate-to-Source Voltage 0.16 0.12 ID = 1 A 0.08 ID = 5.3 A TJ = 25_C 0.04 1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 6 Document Number: 72281 S-41428--Rev. B, 26-Jul-04 SI4500BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.4 0.3 VGS(th) Variance (V) 0.2 0.1 0.0 -0.1 -0.2 -50 P-CHANNEL Single Pulse Power 80 70 60 Threshold Voltage Power (W) ID = 250 mA 50 40 30 20 10 0 0.001 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 Safe Operating Area IDM Limited rDS(on) Limited P(t) = 0.0001 P(t) = 0.001 10 I D - Drain Current (A) 1 ID(on) Limited TA = 25_C Single Pulse BVDSS Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.1 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 75_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Document Number: 72281 S-41428--Rev. B, 26-Jul-04 www.vishay.com 7 SI4500BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 P-CHANNEL Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 8 Document Number: 72281 S-41428--Rev. B, 26-Jul-04 |
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